dual igbtmod? nf-series module 600 amperes/600 volts CM600DY-12NF outline drawing and circuit diagram powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 rev. 09/09 description: powerex igbtmod? modules are designed for use in switching applications. each module consists of two igbt transistors in a half- bridge configuration with each tran - sistor having a reverse-connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heatsinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heat sinking applications: ac motor control ups battery powered supplies ordering information: example: select the complete part module number you desire from the table below -i.e. CM600DY-12NF is a 600v (v ces ), 600 ampere dual igbtmod? power module. type current rating v ces amperes volts (x 50) cm 600 12 a w f f b n j l (4 places) d m nuts (3 places) g g h k k k p p p t thick u width q q v c s r g2 e2 e1 g1 c1 e2 c2e1 t c measured point (baseplate) label c2e1 e2 c1 g2 e2 e1 g1 e dimensions inches millimeters a 4.33 110.0 b 3.15 80.0 c 1.14+0.04/-0.002 29.0+1.0/-0.5 d 3.660.01 93.00.25 e 2.440.01 62.00.25 f 0.98 25.0 g 0.24 6.0 h 0.59 15.0 j 0.81 20.5 k 0.55 14.0 l 0.26 dia. dia. 6.5 dimensions inches millimeters m m6 metric m6 n 1.18 30.0 p 0.71 18.0 q 0.28 7.0 r 0.83 21.2 s 0.33 8.5 t 0.02 0.5 u 0.110 2.8 v 0.16 4.0 w 0.85 21.5
CM600DY-12NF dual igbtmod? nf-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 rev. 09/09 absolute maximum ratings, t j = 25 c unless otherwise specifed ratings symbol CM600DY-12NF units junction temperature t j C40 to 150 c storage temperature t stg C40 to 125 c collector-emitter voltage (g-e short) v ces 600 volts gate-emitter voltage (c-e short) v ges 20 volts collector current*** (dc, t c = 89c) i c 600 amperes peak collector current i cm 1200* amperes emitter current** (t c = 25c) i e 600 amperes emitter surge current** i em 1200* amperes maximum collector dissipation (t c = 25c, t j 150c) p c 1130 watts mounting torque, m6 main terminal 40 in-lb mounting torque, m6 mounting 40 in-lb weight 580 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts static electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v 1.0 ma gate leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 60ma, v ce = 10v 5.0 6.0 7.5 volts collector-emitter saturation voltage v ce(sat) i c = 600a, v ge = 15v, t j = 25c 1.7 2.2 volts i c = 600a, v ge = 15v, t j = 125c 1.7 volts total gate charge q g v cc = 300v, i c = 600a, v ge = 15v 2400 nc emitter-collector voltage** v ec i e = 600a, v ge = 0v 2.6 volts dynamic electrical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units input capacitance c ies 90 nf output capacitance c oes v ce = 10v, v ge = 0v 11.0 nf reverse transfer capacitance c res 3.6 nf inductive turn-on delay time t d(on) 500 ns load rise time t r v cc = 300v, i c = 600a, 300 ns switch turn-off delay time t d(off) v ge1 = v ge2 = 15v, r g = 4.2, 750 ns time fall time t f inductive load 300 ns diode reverse recovery time** t rr switching operation, 250 ns diode reverse recovery charge** q rr i e = 600a 8.7 c *pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. **represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). ***t c measured point is just under the chips. if this value is used, r th(f-a) should be measured just under the chips.
CM600DY-12NF dual igbtmod? nf-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 3 rev. 09/09 thermal and mechanical characteristics, t j = 25 c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, t c reference 0.11 c/w point per outline drawing thermal resistance, junction to case r th(j-c) d per fwdi 1/2 module, t c reference 0.18 c/w point per outline drawing thermal resistance, junction to case r th(j-c) q per igbt 1/2 module, 0.046 c/w t c reference point under chips contact thermal resistance r th(c-f) per 1/2 module, thermal grease applied 0.02 c/w external gate resistance r g 1.0 10 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 0 10 4 10 3 10 2 10 1 10 1 0 1 3 4 2 5 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 4 3 0 300 900 2 1 0 1200 v ge = 15v t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 1200a i c = 600a i c = 240a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 300 0 v ge = 20v 10 11 12 15 13 9 8 t j = 25 o c 600 900 1200 600 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 0 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 300v v ge = 15v r g = 4.2? t j = 125c inductive load t f 10 3 t j = 25c t j = 125c
CM600DY-12NF dual igbtmod? nf-series module 600 amperes/600 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 4 rev. 09/09 time, (s) transient thermal impedance characteristics (igbt & fwdi) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th( j-c) = 0.11c/w (igbt) r th( j-c) = 0.18c/w (fwdi) normalized transient thermal impedance, z t h ( j-c') gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 16 12 8 4 0 700 1400 2100 3500 2800 v cc = 300v emitter current, i e , (amperes) reverse recovery time, t r r , (ns) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i r r , (amperes) v cc = 300v v ge = 15v r g = 4.2? t j = 25c inductive load v cc = 200v i c = 600a 10 3 collector current, i c , (amperes) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 1 10 2 10 1 10 0 v cc = 300v v ge = 15v r g = 4.2? t j = 125c inductive load c snubber at bus v cc = 300v v ge = 15v i c = 600a t j = 125c inductive load c snubber at bus 10 3 switching loss vs. collector current (typical) gate resistance, r g , (?) switching loss, e sw(on) , e sw(off) , (mj/pulse) 10 2 10 0 10 1 10 0 10 1 switching loss vs. gate resistance (typical) e sw(on) e sw(off) e sw(on) e sw(off) i r r t r r
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